Q. Assertion (A): FET is a unipolar device.

Reason (R): BJT is bipolar device.

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Q. Ferrites are

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Q. High purity copper is obtained by

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Q. Photo electric emission can occur only if the frequency of light is more than threshold frequency.

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Q. In a JFET the width of channel is controlled by

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Q. The unit of thermal resistance of a semi-conductor device is

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Q. No load d.c. output will be least in case of

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Q. When an electron breaks a covalent bond and moves away,

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Q. A photo diode is

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Q. Germanium and Si phosphorus have their maximum spectral response in the

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Q. In which condition does BJT behave like a closed switch?

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Q. The primary reason for the widespread use of Si in semiconductor device technology is

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Q. If the conductivity of pure germanium is 1.54 siemens/metre, its resistivity in ohm-metre will be nearly

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Q. Reluctivity is analogous to

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Q. The v-i characteristics of a diode may be linear or non linear.

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Q. If a coil has diameter 'd' number of turns 'N' and form factor F then the inductance of the coil is proportional to

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Q. Lowest resistivity of the following is

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Q. Peak inverse voltage will be highest for

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Q. In CE configuration, the output characteristics of a bipolar junction transistor is drawn between

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Q. Assertion (A): The reverse current in a p-n junction is nearly constant.

Reason (R): The reverse breakdown voltage of a p-n diode depends on the extent of doping.

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