Q. If the conductivity of pure germanium is 1.54 siemens/metre, its resistivity in ohm-metre will be nearly

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Q. Reluctivity is analogous to

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Q. The v-i characteristics of a diode may be linear or non linear.

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Q. If a coil has diameter 'd' number of turns 'N' and form factor F then the inductance of the coil is proportional to

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Q. Lowest resistivity of the following is

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Q. Peak inverse voltage will be highest for

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Q. In CE configuration, the output characteristics of a bipolar junction transistor is drawn between

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Q. Assertion (A): The reverse current in a p-n junction is nearly constant.

Reason (R): The reverse breakdown voltage of a p-n diode depends on the extent of doping.

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Q. An n type semiconductor is illuminated by a steady flux of photons with energy greater than the band gap energy. The change in conductivity Δσ obeys which relation?
[ Here, e is the electron charge, μn electron mobility, μp hole mobility, Δn (Δp) is the excess electron (hole) density ].

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Q. The band gap of Si at room temperature is

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Q. Spot the odd one out

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Q. Transition capacitance is associated with __________ and depletion capacitance is associated with __________ diodes.

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Q. If the energy gap of a semiconductor is 1.1 eV, then it would be.

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Q. The maximum rectification efficiency in case of full wave rectifier is

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Q. For a full wave bridge rectifier supplied with 50 Hz a.c., the lowest ripple frequency will be

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Q. When an electron rises through a potential of 100 V it will acquired an energy of

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Q. Which one of the following gain equations is correct for a MOSFET common-source amplifier?

(gm is mutual conductance, and RD is load resistance at the drain)

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Q. If 1 kVA transformer is used for all of the following rectifiers, the d.c. power availability will be least in case of

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Q. In which of the following does a negative resistance region exist in the v-i characteristics?

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Q. The intrinsic resistivity of silicon at 300 K is about

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