Q. If the energy gap of a semiconductor is 1.1 eV, then it would be.

View solution

Q. The maximum rectification efficiency in case of full wave rectifier is

View solution

Q. For a full wave bridge rectifier supplied with 50 Hz a.c., the lowest ripple frequency will be

View solution

Q. When an electron rises through a potential of 100 V it will acquired an energy of

View solution

Q. Which one of the following gain equations is correct for a MOSFET common-source amplifier?

(gm is mutual conductance, and RD is load resistance at the drain)

View solution

Q. If 1 kVA transformer is used for all of the following rectifiers, the d.c. power availability will be least in case of

View solution

Q. In which of the following does a negative resistance region exist in the v-i characteristics?

View solution

Q. The intrinsic resistivity of silicon at 300 K is about

View solution

Q. What happens when forward bias is applied to a junction diode?

View solution

Q. A differential amplifier is invariably used in the I/P stage of all OP-amps. This is done basically to produce the OP-amp with a very high.

View solution

Q. The addition of impurity in extrinsic semiconductor is about 1 part in 10⁸ parts.

View solution

Q. It is required to trace the output characteristics of a CE bipolar transistor on a CRO screen. The proper method is

View solution

Q. Atomic number of germanium is

View solution

Q. The resistivity of ferrites is

View solution

Q. A JFET

View solution

Q. In monostable multivibrator

View solution

Q. Which of the following is the ferric electric material?

View solution

Q. The amount of time between the creation and disappearance of a hole in an intrinsic semiconductor material is called

View solution

Q. In which n type device does p substrate extend upto silicon dioxide layer?

View solution

Q. In a N-type semi-conductor, the concentration of minority carriers is mainly depends on

View solution