Q. The amount of time between the creation and disappearance of a hole in an intrinsic semiconductor material is called

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Q. In which n type device does p substrate extend upto silicon dioxide layer?

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Q. In a N-type semi-conductor, the concentration of minority carriers is mainly depends on

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Q. Resistivity of metals is expressed in terms of

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Q. Zener diode is invariably used with

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Q. The relation between plate current and plate voltage of a vacuum diode is called

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Q. Given that the band gap of cadmium sulphide is 2.5 eV, the maximum photon wavelength, for e¯-hole pair generation will be

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Q. Hall effect can be used

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Q. The probability giving distribution of electrons over a range of allowed energy levels is known as

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Q. Hall coefficient is reciprocal of charge density.

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Q. Under low level injection assumption, the infected minority carrier current for an extrinsic semiconductor is essentially the

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Q. As the reverse voltage is increased, the depletion layer

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Q. The cascade amplifier is a multistage configuration of

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Q. The light output of LED varies as (current)ⁿ. The value of n is about

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Q. If an electron move through a potential difference of 500 V, the energy possesses by it will be

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Q. In an intrinsic semiconductor, the intrinsic charge concentration at any absolute temperature T is proportional to

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Q. The conductivity of an intrinsic semiconductor is (symbols have the usual meanings).

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Q. The current due to thermionic emission is proportional to

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Q. For radiating ultraviolet rays, LEDs use

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Q. The forbidden band in semiconductors is of the order of

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