Q. The probability giving distribution of electrons over a range of allowed energy levels is known as

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Q. Hall coefficient is reciprocal of charge density.

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Q. Under low level injection assumption, the infected minority carrier current for an extrinsic semiconductor is essentially the

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Q. As the reverse voltage is increased, the depletion layer

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Q. The cascade amplifier is a multistage configuration of

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Q. The light output of LED varies as (current)ⁿ. The value of n is about

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Q. If an electron move through a potential difference of 500 V, the energy possesses by it will be

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Q. In an intrinsic semiconductor, the intrinsic charge concentration at any absolute temperature T is proportional to

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Q. The conductivity of an intrinsic semiconductor is (symbols have the usual meanings).

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Q. The current due to thermionic emission is proportional to

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Q. For radiating ultraviolet rays, LEDs use

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Q. The forbidden band in semiconductors is of the order of

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Q. For an P-N-P transistor in normal operation its junction are biased as

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Q. A FET is to be operated as voltage variable resistor. For this drain to source voltage VDS should be,

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Q. Assertion (A): FET has characteristics very similar to that of pentode.

Reason (R): Both FET and pentode are voltage controlled devices.

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Q. The current gain of a bipolar transistor drops at high frequencies because of

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Q. Highest resistivity of the following is

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Q. Lowest noise can be expected in case of

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Q. For a BJT, under the saturation condition,

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Q. When a semiconductor bar is heated at one end, a voltage across the bar is developed. If the heated is positive the semiconductor is

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