Q. The current due to thermionic emission is proportional to

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Q. For radiating ultraviolet rays, LEDs use

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Q. The forbidden band in semiconductors is of the order of

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Q. For an P-N-P transistor in normal operation its junction are biased as

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Q. A FET is to be operated as voltage variable resistor. For this drain to source voltage VDS should be,

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Q. Assertion (A): FET has characteristics very similar to that of pentode.

Reason (R): Both FET and pentode are voltage controlled devices.

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Q. The current gain of a bipolar transistor drops at high frequencies because of

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Q. Highest resistivity of the following is

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Q. Lowest noise can be expected in case of

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Q. For a BJT, under the saturation condition,

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Q. When a semiconductor bar is heated at one end, a voltage across the bar is developed. If the heated is positive the semiconductor is

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Q. Almost all resistors are made in a monolithic integrated circuit

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Q. The forbidden energy gap for silicon is

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Q. In energy band diagram of n type semiconductor, the donor energy level is

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Q. For an n-channel JEFT having drain source voltage constant if the gate source voltage is increased (more negative) pinch off would occur for

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Q. In a JFET, the drain current is maximum when

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Q. A potential difference is developed across a current carrying metal strip when the strip is placed in a transverse magnetic field. The above effect is known as

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Q. In a zener diode

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Q. Which one of the following bipolar transistors has the highest current gain bandwidth Product (fr) for similar geometry?

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Q. The depletion layer across a P⁺ n junction lies

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