Q. The forbidden energy gap for silicon is

View solution

Q. In energy band diagram of n type semiconductor, the donor energy level is

View solution

Q. For an n-channel JEFT having drain source voltage constant if the gate source voltage is increased (more negative) pinch off would occur for

View solution

Q. In a JFET, the drain current is maximum when

View solution

Q. A potential difference is developed across a current carrying metal strip when the strip is placed in a transverse magnetic field. The above effect is known as

View solution

Q. In a zener diode

View solution

Q. Which one of the following bipolar transistors has the highest current gain bandwidth Product (fr) for similar geometry?

View solution

Q. The depletion layer across a P⁺ n junction lies

View solution

Q. An increase of reverse voltage decreases the junction capacitance.

View solution

Q. The maximum forward current in case of signal diode is in the range of

View solution

Q. On which of the following effect do thermocouples work?

View solution

Q. Which of the following constitutes an active component?

View solution

Q. Which of the following characteristics of a silicon p-n junction diode make it suitable for use as ideal diode?

1. It has low saturation current.
2. It has high value of cut in voltage.
3. It can withstand large reverse voltage.
4. When compared with germanium diode, silicon diode shows a lower degree of temperature dependence under reverse conditions.

Select the answer using the given below

View solution

Q. Assertion (A): Hall effect is used to find the type of semiconductor.

Reason (R): When a specimen of semiconductor carrying current I lies in a magnetic field the force on electrons and holes is in opposite directions.

View solution

Q. When a p-n junction is forward biased. The width of depletion layer decreases.π

View solution

Q. In which of the following case the rating of the transformer to deliver 100 watts of d.c. power to a load, will be least?

View solution

Q. When a p-n Junction is forward biased

View solution

Q. Consider the following statements about conditions that make a metal semiconductor contact rectifying

1. N type semiconductor with work function φs more than work function φM of metal
2. N type semiconductor with work function φs less than work function φM of metal
3. P type semiconductor with work function φs more than work function φM of metal
4. P type semiconductor with work function φs less than work function φM of metal

Of these statements

View solution

Q. Silicon diodes have __________ reverse resistance than germanium diodes.

View solution

Q. The kinetic energy of photoelectrons emitted by a photo sensitive surface depends on

View solution