Q. Silicon diodes have __________ reverse resistance than germanium diodes.

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Q. The kinetic energy of photoelectrons emitted by a photo sensitive surface depends on

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Q. When reverse bias is applied to a junction diode

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Q. Which of the following statements regarding two transistor model of p-n-n-p device is correct?

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Q. Resistivity of carbon is around

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Q. Which of the following is anti-ferromagnetic material?

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Q. Assertion (A): The capacitance of a reverse biased pin diode is lower than that of reverse biased p-n diode.

Reason (R): A PIN diode has an intrinsic layer between p and n regions.

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Q. In the saturation region of CE output characteristics of n-p-n transistor, VCE is about

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Q. In n channel JFET

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Q. An intrinsic semiconductor (intrinsic electron density = 10¹⁶ m¯³) is deped with donors to a level of 10²² m¯³. What is the hole density assuming all donors to be ionized?

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Q. The capacitor filter provides poor voltage regulation because

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Q. If Vr is the reverse voltage across a graded P-N Junction, then the junction capacitance cj is proportional to

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Q. In the schematic representation of bipolar junction transistor, the direction of arrow shows the direction of flow of

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Q. Conductivity σ, mobility μ and Hall coefficient KH are related as

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Q. Electric breakdown strength of a material depends on its

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Q. The atomic weight of an atom is determined by

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Q. The minimum charge carried by an ion is

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Q. In intrinsic semiconductor at 300 K, the magnitude of free electron concentration in silicon is about

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Q. EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that

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Q. Which of the following semi-conductor has forbidden energy gap less 1 eV?

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