Q. In intrinsic semiconductor at 300 K, the magnitude of free electron concentration in silicon is about

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Q. EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that

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Q. Which of the following semi-conductor has forbidden energy gap less 1 eV?

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Q. In the vacuum diode equation ib = keb^1.5, the current is

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Q. Thermosetting polymers are

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Q. Which of these is used in seven segment display?

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Q. Consider the following statement S1 and S2.

S1: The β of a bipolar transistor reduces if the base width is increased.
S2: the β of a bipolar transistor increases if the doping concentration in the base is increased.

Which one of the following is correct?

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Q. Assertion (A): A BJT can be used as a switch.

Reason (R): In forward active mode emitter base junction is forward biased and base collector junction is reverse biased.

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Q. The concentration of minority carriers in an extrinsic semiconductor under equilibrium is

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Q. The mean life time of the minority carriers is in the range of a few

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Q. Choose the correct match for input resistance of various amplifier configurations shown below configuration.

CB : Common Base LO : Low
CC : Common Collector   MO : moderate
CE : Common Emitter HI: High

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Q. In n type semiconductor, the free electron concentration

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Q. If both emitter base and collector base junctions of a BJT are forward biased, the transistor is in

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Q. Which of the following can be operated with positive as well as negative gate voltage?

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Q. The reverse breakdown voltage of a diode depends on the extent of doping.

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Q. The resistivity of a semiconductor

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Q. The voltage at which Avalanche occurs is known as

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Q. If the energy gap of a semiconductor is 1.1 eV, then it would be

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Q. In intrinsic semiconductor the increase in conductivity per degree increase in temperature is about

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Q. The ripple factor for a bridge rectifier is

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