Q. Which of these is used in seven segment display?

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Q. Consider the following statement S1 and S2.

S1: The β of a bipolar transistor reduces if the base width is increased.
S2: the β of a bipolar transistor increases if the doping concentration in the base is increased.

Which one of the following is correct?

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Q. Assertion (A): A BJT can be used as a switch.

Reason (R): In forward active mode emitter base junction is forward biased and base collector junction is reverse biased.

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Q. The concentration of minority carriers in an extrinsic semiconductor under equilibrium is

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Q. The mean life time of the minority carriers is in the range of a few

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Q. Choose the correct match for input resistance of various amplifier configurations shown below configuration.

CB : Common Base LO : Low
CC : Common Collector   MO : moderate
CE : Common Emitter HI: High

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Q. In n type semiconductor, the free electron concentration

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Q. If both emitter base and collector base junctions of a BJT are forward biased, the transistor is in

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Q. Which of the following can be operated with positive as well as negative gate voltage?

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Q. The reverse breakdown voltage of a diode depends on the extent of doping.

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Q. The resistivity of a semiconductor

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Q. The voltage at which Avalanche occurs is known as

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Q. If the energy gap of a semiconductor is 1.1 eV, then it would be

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Q. In intrinsic semiconductor the increase in conductivity per degree increase in temperature is about

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Q. The ripple factor for a bridge rectifier is

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Q. In a centre tap full wave rectifier, 50 V is the peak voltage between the centre tap and one of the ends of the secondary. The maximum voltage across the reverse biased diode will be

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Q. Consider the following statements.
The functions of an oxide layer in an IC device is to

1. mask against diffusion or ion implant
2. insulate the surface electrically
3. increase the melting point of silicon
4. produce a chemically stable protective layer

Of these statements, which are true.

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Q. The forbidden energy gap for germanium is

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Q. If the gate of JFET is reverse biased, the width of depletion region

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Q. A long specimen of P type semiconductor material

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