Q. If the energy gap of a semiconductor is 1.1 eV, then it would be

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Q. In intrinsic semiconductor the increase in conductivity per degree increase in temperature is about

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Q. The ripple factor for a bridge rectifier is

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Q. In a centre tap full wave rectifier, 50 V is the peak voltage between the centre tap and one of the ends of the secondary. The maximum voltage across the reverse biased diode will be

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Q. Consider the following statements.
The functions of an oxide layer in an IC device is to

1. mask against diffusion or ion implant
2. insulate the surface electrically
3. increase the melting point of silicon
4. produce a chemically stable protective layer

Of these statements, which are true.

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Q. The forbidden energy gap for germanium is

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Q. If the gate of JFET is reverse biased, the width of depletion region

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Q. A long specimen of P type semiconductor material

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Q. For BJT, under saturation condition

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Q. An inductor filter has a ripple that __________ with load resistance and consequently is used only with relatively __________ load currents.

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Q. In a JFET

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Q. Introducing a resistor in the emitter of a common amplifier stabilizes the d.c. operating point against variations in

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Q. If the atomic number of germanium is 32, the number of electrons in the outer most shell will be

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Q. Dielectric loss due to polarisation occurs in

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Q. A metal loses electrons at room temperature.

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Q. Consider the following statement associated with bipolar junction transistor and JFET

1. The former has higher input impedance than the later
2. The former has higher frequency stability than the later
3. The later has lower noise figure than the former
4. The later has higher power rating than the former

Of these statements

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Q. The turn off time of a bipolar transistor is about

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Q. Hystresis loss least depends on

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Q. In a bipolar transistor, emitter efficiency is about

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Q. For signal diodes the PIV rating is usually in the range

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