Q. Consider the following statement associated with bipolar junction transistor and JFET

1. The former has higher input impedance than the later
2. The former has higher frequency stability than the later
3. The later has lower noise figure than the former
4. The later has higher power rating than the former

Of these statements

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Q. The turn off time of a bipolar transistor is about

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Q. Hystresis loss least depends on

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Q. In a bipolar transistor, emitter efficiency is about

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Q. For signal diodes the PIV rating is usually in the range

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Q. The potential of suppressor grid (with respect to cathode) is usually

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Q. Photoelectric effect occurs only in semiconductors and not in metals.

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Q. Which of these has peak and valley points in v-i curve?

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Q. The scaling factor of an MOS device using constant voltage scaling model, the gate area of the device will be scaled as

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Q. A full wave bridge rectifier is supplied voltage at 50 Hz. The lowest ripple frequency will be

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Q. The output characteristics of a bipolar transistor has three distinct regions. They are known as

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Q. Assertion (A): In a BJT, αdc is about 0.98.

Reason (R): In a BJT, recombination in base region is high.

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Q. Wienbridge oscillator uses

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Q. Which of the following material is preferred for transformer cores operating in micro wave frequency range?

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Q. The ac resistance of a forward biased p-n junction diode operating at a bias voltage V and carrying current 'I' is

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Q. As the temperature of an intrinsic semiconductor material is increased

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Q. In an insulated gate FET, the polarity of inversion layer is the same as that of

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Q. Hall effect can be used to find the type of semiconductor.

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Q. The conductivity of germanium increases by about 6 percent per degree increase in temperature.

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Q. The range of visible light is

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