Q. As the temperature of an intrinsic semiconductor material is increased

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Q. In an insulated gate FET, the polarity of inversion layer is the same as that of

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Q. Hall effect can be used to find the type of semiconductor.

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Q. The conductivity of germanium increases by about 6 percent per degree increase in temperature.

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Q. The range of visible light is

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Q. Which of the following materials has the highest electrical conductivity?

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Q. In a bipolar transistor

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Q. Hay bridge is suitable for measuring inductance of which one of the following inductors?

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Q. When a substance is repelled by a magnetic field it is known as

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Q. If μn is mobility of free electron and μp is mobility of holes then for silicon at 300 K

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Q. In a specimen of n type semiconductor, the initial concentration of holes and electrons is pno and nno. When the specimen is subjected to radiation, the hole and electron concentration increase to pn and nn. Then

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Q. Which of the following diode is designed to operate in the breakdown region?

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Q. Fill in the suitable word in the blanks is the following question.

The electron in the outermost orbit is called __________ electron.

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Q. A silicon diode is forward biased and total applied voltage is 5 V. The voltage across p-n junction is

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Q. In a triode

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Q. Higher value of ripple factor indicates

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Q. When a semi-conductor is doped, its electrical conductivity

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Q. The conduction band is

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Q. If an additional two diodes were used to connect the 1 kW load across a bridge rectifier circuits, utilizing the full secondary of the transformer, how much d.c. power could be delivered using a transformer with the rating of 105 VA?

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Q. In an n channel JFET, VGS = VGS(off). Then

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