Q. Which of the following diode is designed to operate in the breakdown region?

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Q. Fill in the suitable word in the blanks is the following question.

The electron in the outermost orbit is called __________ electron.

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Q. A silicon diode is forward biased and total applied voltage is 5 V. The voltage across p-n junction is

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Q. In a triode

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Q. Higher value of ripple factor indicates

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Q. When a semi-conductor is doped, its electrical conductivity

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Q. The conduction band is

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Q. If an additional two diodes were used to connect the 1 kW load across a bridge rectifier circuits, utilizing the full secondary of the transformer, how much d.c. power could be delivered using a transformer with the rating of 105 VA?

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Q. In an n channel JFET, VGS = VGS(off). Then

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Q. Varactor diode is forward biased when it is used.

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Q. A good ohmic contact on a P-type semiconductor chip is formed by introducing

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Q. The impurity added to extrinsic semiconductor is of the order of

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Q. For a BJT, avalanche multiplication factor depends on

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Q. The impurity commonly used for realizing the base region of a n-p-n transistor is

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Q. Assertion (A): In CE connection of n-p-n transistor. VCE is positive.

Reason (R): In BJT, the base collector junction is reverse biased.

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Q. Assertion (A): Tunnel diode is used in many pulse and digital circuits.

Reason (R): The v-i curve of a tunnel diode resembles letter 'N'.

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Q. In ferromagnetic materials

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Q. Which one of the following circuits is most suitable as an oscillator at a frequency of 100Hz?

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Q. The conductivity of an intrinsic semiconductor is

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Q. At a P-N junction, the potential barrier is due to the charges on either side of the junction, which consists of

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