Q. The impurity commonly used for realizing the base region of a n-p-n transistor is

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Q. Assertion (A): In CE connection of n-p-n transistor. VCE is positive.

Reason (R): In BJT, the base collector junction is reverse biased.

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Q. Assertion (A): Tunnel diode is used in many pulse and digital circuits.

Reason (R): The v-i curve of a tunnel diode resembles letter 'N'.

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Q. In ferromagnetic materials

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Q. Which one of the following circuits is most suitable as an oscillator at a frequency of 100Hz?

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Q. The conductivity of an intrinsic semiconductor is

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Q. At a P-N junction, the potential barrier is due to the charges on either side of the junction, which consists of

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Q. In a vacuum triode μ = rpgm.

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Q. The material which has zero temperature coefficient of resistance is

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Q. When the light falling on a photodiode increases, the reverse minority current

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Q. When a ferromagnetic substance is magnetised, small changes in dimensions occur. Such a phenomenon is known as

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Q. In a bipolar transistor which current is smallest

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Q. With increasing temperature, the electrical conductivity of metals

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Q. The reverse saturation current in a semiconductor diode consists of

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Q. The current gain of a transistor is the ratio of

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Q. If a sample of Ge and a sample of Si have the same impurity density are kept at room temperature

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Q. Photoelectric emitters in photo tubes are generally made of

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Q. Assertion (A): Power transistors are more commonly of silicon npn type.

Reason (R): The fabrication of silicon npn transistors is easy.

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Q. In N-type semiconductor

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Q. The addition of n type impurity to intrinsic material creates allowable energy levels.

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