Q. The reverse saturation current in a semiconductor diode consists of

View solution

Q. The current gain of a transistor is the ratio of

View solution

Q. If a sample of Ge and a sample of Si have the same impurity density are kept at room temperature

View solution

Q. Photoelectric emitters in photo tubes are generally made of

View solution

Q. Assertion (A): Power transistors are more commonly of silicon npn type.

Reason (R): The fabrication of silicon npn transistors is easy.

View solution

Q. In N-type semiconductor

View solution

Q. The addition of n type impurity to intrinsic material creates allowable energy levels.

View solution

Q. Which of the following elements act as donor impurities?

1. Gold
2. Phosphorus
3. Boron
4. Antimony
5. Arsenic
6. Indium

Select the correct answer using the codes given below:

View solution

Q. Which of the following material can be used in cable shields?

View solution

Q. The charge of an electron is

View solution

Q. The on voltage and forward breakover voltage of an SCR depend on

View solution

Q. EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore, it can be concluded that

View solution

Q. Assertion (A): The resistivity of intrinsic semiconductor decreases with increase in temperature.

Reason (R): The forbidden gap decreases with increase in temperature.

View solution

Q. Before doping the semiconductor material is

View solution

Q. The atomic number of silicon is 14. It can be therefore concluded that

View solution

Q. X-rays cannot penetrate through a thick sheet of

View solution

Q. Ohmic range of metal film resistors is

View solution

Q. The depletion layer in a reverse biased p-n junction is due to the presence of

View solution

Q. Which materials find application in MASER?

View solution

Q. An electrically neutral semiconductor has

View solution