Q. The charge of an electron is

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Q. The on voltage and forward breakover voltage of an SCR depend on

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Q. EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore, it can be concluded that

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Q. Assertion (A): The resistivity of intrinsic semiconductor decreases with increase in temperature.

Reason (R): The forbidden gap decreases with increase in temperature.

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Q. Before doping the semiconductor material is

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Q. The atomic number of silicon is 14. It can be therefore concluded that

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Q. X-rays cannot penetrate through a thick sheet of

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Q. Ohmic range of metal film resistors is

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Q. The depletion layer in a reverse biased p-n junction is due to the presence of

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Q. Which materials find application in MASER?

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Q. An electrically neutral semiconductor has

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Q. Magnetic recording tape is most commonly made from

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Q. The Ni-Zn ferrites are used for audio and TV transformers is that

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Q. Hall's effect can be used to measure

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Q. For insulators the energy gap is of the order of

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Q. When electronic emission occurs due to bombardment of high velocity electrons on a metal surface, it is called secondary emission.

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Q. The reverse saturation current depends on the reverse bias.

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Q. In n channel JFET, the gate voltage is made more negative

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Q. Metals approach superconductivity conditions

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Q. The phenomenon known as "Early effect" in a BJT refers to a reduction of the effective base width caused by

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