Q. The reverse saturation current depends on the reverse bias.

View solution

Q. In n channel JFET, the gate voltage is made more negative

View solution

Q. Metals approach superconductivity conditions

View solution

Q. The phenomenon known as "Early effect" in a BJT refers to a reduction of the effective base width caused by

View solution

Q. At absolute zero temperature a semiconductor behaves like

View solution

Q. In a 741 OP-amp, there is 20 dB/decade fall-off starting at a relatively low frequency. This is due to

View solution

Q. The current due to thermionic emission is given by Richardson Dushman equation.

View solution

Q. The thermionic emission current is given by

View solution

Q. In forward active region, the operation of a BJT

View solution

Q. The conductivity of a semiconductor crystal due to any current carrier is not proportional to

View solution

Q. A P-N junction diode dynamic conductance is directly proportional to

View solution

Q. Gold is often diffused into silicon P-N junction devices to

View solution

Q. In a solar cell, the photovoltaic voltages is the voltage at which the resultant current is

View solution

Q. The forbidden energy gap between the valence band and conduction band will be wide in case of

View solution

Q. At 0 K the forbidden energy gap in intrinsic semi conductor is about

View solution

Q. The resistance of a metallic wire would

View solution

Q. If 100 V is the peak voltage across the secondary of the transformer in a half-wave rectifier (without any filter circuit), then the maximum voltage on the reverse-biased diode is

View solution

Q. The O/P Power of a power amplifier is several times its input power. It is possible because

View solution

Q. In p type semiconductor holes are majority carriers.

View solution

Q. Due to the formation of Schottky defects the density of the crystal

View solution