Q. At 0 K the forbidden energy gap in intrinsic semi conductor is about

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Q. The resistance of a metallic wire would

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Q. If 100 V is the peak voltage across the secondary of the transformer in a half-wave rectifier (without any filter circuit), then the maximum voltage on the reverse-biased diode is

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Q. The O/P Power of a power amplifier is several times its input power. It is possible because

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Q. In p type semiconductor holes are majority carriers.

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Q. Due to the formation of Schottky defects the density of the crystal

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Q. The band gap of silicon at 300K is

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Q. Typical value of reverse current in a semiconductor diode is

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Q. Which of the following element has four valence electrons?

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Q. In a transistor operating in forward active mode

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Q. In standard TTL, the 'totem pole' stage refers to

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Q. In p type semiconductor, the hole concentration

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Q. In order to achieve good stabilization in potential divider method current I1 through R1 and R2 should be

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Q. A sample of N type semiconductor has electron density of 6.25 x 10⁸/cm² at 300 K. If the intrinsic concentration of carriers in this sample is 2.5 x 10¹³/cm³ at this temperature, the hole density works out to be

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Q. Addition of 0.3 to 3.5% silicon to iron

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Q. A bistable multivibrator

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Q. Transconductance indicates the

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Q. The density of states (i.e. number of states per eV per m³) in the conduction band for energy level E is proportional to

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Q. A-P type material has an acceptor ion concentration of 1 x 10¹⁶ per cm³. Its intrinsic carrier concentration is 1.48 x 10¹ᴼ/ cm. The hole and electron mobilities are 0.05m²/V-sec and 0.13 m²/V-sec respectively calculate the resistivity of the material

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Q. Resistivity is a property of a semiconductor that depends on

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