Q. Due to the formation of Schottky defects the density of the crystal

View solution

Q. The band gap of silicon at 300K is

View solution

Q. Typical value of reverse current in a semiconductor diode is

View solution

Q. Which of the following element has four valence electrons?

View solution

Q. In a transistor operating in forward active mode

View solution

Q. In standard TTL, the 'totem pole' stage refers to

View solution

Q. In p type semiconductor, the hole concentration

View solution

Q. In order to achieve good stabilization in potential divider method current I1 through R1 and R2 should be

View solution

Q. A sample of N type semiconductor has electron density of 6.25 x 10⁸/cm² at 300 K. If the intrinsic concentration of carriers in this sample is 2.5 x 10¹³/cm³ at this temperature, the hole density works out to be

View solution

Q. Addition of 0.3 to 3.5% silicon to iron

View solution

Q. A bistable multivibrator

View solution

Q. Transconductance indicates the

View solution

Q. The density of states (i.e. number of states per eV per m³) in the conduction band for energy level E is proportional to

View solution

Q. A-P type material has an acceptor ion concentration of 1 x 10¹⁶ per cm³. Its intrinsic carrier concentration is 1.48 x 10¹ᴼ/ cm. The hole and electron mobilities are 0.05m²/V-sec and 0.13 m²/V-sec respectively calculate the resistivity of the material

View solution

Q. Resistivity is a property of a semiconductor that depends on

View solution

Q. Operating point signifies that

View solution

Q. For a junction FET in the pinch off region as the drain voltage is increased, the drain current

View solution

Q. For a MOS capacitor fabricated on a P-type semiconductor, strong inversion occurs when

View solution

Q. The primary function of a clamper circuit is to

View solution

Q. Breakdown in dielectric may be

View solution