Q. Breakdown in dielectric may be

View solution

Q. What is the function of silicon dioxide layer in MOSFETS?

View solution

Q. The modulation of effective base width by collector voltage is known as Early effect, hence reverse collector voltage

View solution

Q. Assertion (A): In intrinsic semiconductors, the charge concentration increases with temperature.

Reason (R): At higher temperatures, the forbidden energy gap in semiconductors is lower.

View solution

Q. Covalent bond energy in Germanium is approximately

View solution

Q. One electron volt is equivalent to

View solution

Q. Resistivity of electrical conductors is most affected by

View solution

Q. Wiedemann-Franz law correlates

View solution

Q. Holes and electrons move in opposite directions.

View solution

Q. AE 139 is a

View solution

Q. The function off an oxide layer in an IC device is to

1. mask against diffusion or ion implantation
2. insulate the surface electrically
3. increase the melting point of Si
4. produce a chemically stable protective layer

View solution

Q. The passage of current in an electrolyte is due to the movement of

View solution

Q. In a CE bipolar transistor operating in active region, collector current is independent of

View solution

Q. When a normal atom loses an electron

View solution

Q. A sample of N-type semiconductor has electron density of 6.25 x 10¹⁸/cm³ at 300k. If the intrinsic concentration of carriers in this sample is 2.5 x 10¹³/cm³ at this temperature the hole density works out to be

View solution

Q. Mobility is directly proportional to Hall coefficient.

View solution

Q. n channel FETs are better as compared to p-channel FET because

View solution

Q. An n channel depletion type MOSFET has

View solution

Q. In a JFET avalanche breakdown occurs when VDS = 22 V and VGS = 0. If VGS = -1 V, the avalanche breakdown will occur at

View solution

Q. The energy of one quantum of light equal to hf.

View solution