Q. The modulation of effective base width by collector voltage is known as Early effect, hence reverse collector voltage

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Q. Assertion (A): In intrinsic semiconductors, the charge concentration increases with temperature.

Reason (R): At higher temperatures, the forbidden energy gap in semiconductors is lower.

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Q. Covalent bond energy in Germanium is approximately

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Q. One electron volt is equivalent to

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Q. Resistivity of electrical conductors is most affected by

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Q. Wiedemann-Franz law correlates

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Q. Holes and electrons move in opposite directions.

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Q. AE 139 is a

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Q. The function off an oxide layer in an IC device is to

1. mask against diffusion or ion implantation
2. insulate the surface electrically
3. increase the melting point of Si
4. produce a chemically stable protective layer

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Q. The passage of current in an electrolyte is due to the movement of

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Q. In a CE bipolar transistor operating in active region, collector current is independent of

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Q. When a normal atom loses an electron

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Q. A sample of N-type semiconductor has electron density of 6.25 x 10¹⁸/cm³ at 300k. If the intrinsic concentration of carriers in this sample is 2.5 x 10¹³/cm³ at this temperature the hole density works out to be

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Q. Mobility is directly proportional to Hall coefficient.

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Q. n channel FETs are better as compared to p-channel FET because

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Q. An n channel depletion type MOSFET has

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Q. In a JFET avalanche breakdown occurs when VDS = 22 V and VGS = 0. If VGS = -1 V, the avalanche breakdown will occur at

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Q. The energy of one quantum of light equal to hf.

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Q. For most metals, Fermi level EF is less than

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Q. The spins in a ferrimagnetic material are

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