Q. Mobility is directly proportional to Hall coefficient.

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Q. n channel FETs are better as compared to p-channel FET because

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Q. An n channel depletion type MOSFET has

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Q. In a JFET avalanche breakdown occurs when VDS = 22 V and VGS = 0. If VGS = -1 V, the avalanche breakdown will occur at

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Q. The energy of one quantum of light equal to hf.

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Q. For most metals, Fermi level EF is less than

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Q. The spins in a ferrimagnetic material are

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Q. The permeability of soft iron can be increased by

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Q. All of the following elements have three valence electrons EXCEPT

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Q. Assertion (A): In n-p-n transistor conduction is mainly due to electrons.

Reason (R): In n type materials electrons are majority carriers.

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Q. The factor n in the equation for calculating current for a silicon diode is

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Q. An LED is

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Q. An enhancement mode MOSFET is on when the gate voltage is

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Q. For the n-type semiconductor with n = NP and P = ni² / ND , the hole concentration will fall below the intrinsic value because some of the holes

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Q. The main purpose of using transformer coupling in a class A amplifier is to make it more

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Q. The effective channel length of a MOSFET in saturation decreases with increase in

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Q. Which of the following element does not have three valence electrons?

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Q. Which of the following is used in the sterilization of water?

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Q. Electrons within a metal have energy levels from zero to Fermi level EF.

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Q. A 2 bit binary multiplier can be implemented using

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