Q. Electrons within a metal have energy levels from zero to Fermi level EF.

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Q. A 2 bit binary multiplier can be implemented using

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Q. Secondary emission results

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Q. Ohmic range of carbon composition resistors is

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Q. The depletion layer consists of immobile ions.

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Q. The output V-I characteristics of an Enhancement type MOSFET has

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Q. A Darlington emitter follower circuit is some times used in the output stage of a TTL gate in order to

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Q. Assertion (A): At room temperature the fermi level in p type semiconductor lies nearer to the valence band and in n type semiconductor it lies nearer to the conduction band.

Reason (R): At room temperature, the p type semiconductor is rich in holes and n type semiconductor is rich in electrons.

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Q. The drift velocity of electrons and holes is proportional to electric field strength.

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Q. In an n channel MOSFET, the substrate is connected

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Q. Piezoelectric materials serves as a source of

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Q. Pentavalent impurity creates n type semiconductor.

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Q. When a BJT is operated under saturated condition

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Q. Indium, aluminium, arsenic are all p type impurities.

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Q. As the temperature of an intrinsic semiconductor material is increased

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Q. The forbidden energy gap in semiconductors

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Q. In commercial electron tubes the current produced by the cathode at 1000 K is about

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Q. In a conductor the conduction and valence bands overlap

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Q. In which of the following device electrons will be the majority carriers?

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Q. An n channel JFET has IDS whose value is

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