Q. The forbidden energy gap in semiconductors

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Q. In commercial electron tubes the current produced by the cathode at 1000 K is about

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Q. In a conductor the conduction and valence bands overlap

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Q. In which of the following device electrons will be the majority carriers?

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Q. An n channel JFET has IDS whose value is

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Q. How is an N-channel junction Field Effect Transistor operated as an amplifier?

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Q. Ferrites are

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Q. The merging of a hole and an electron is called

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Q. Which of the following semiconductor has the highest melting point?

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Q. The dc output voltage from a power supply

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Q. Avalanche beakdown is primarily dependent on the phenomenon of

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Q. In a JFET, the drain current is maximum when

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Q. The holes diffuse from P-region to the N-region in a P-N junction diode because

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Q. Surface leakage current is a part of

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Q. Gel is

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Q. When a P-N junction is unbiased, the junction current at equilibrium is

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Q. Dielectric strength of which of the following material has the highest dielectric strength?

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Q. Assertion (A): In p type semiconductor conduction is mainly due to holes.

Reason (R): In p type material the holes are majority carriers.

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Q. In common base configuration, the input characteristics of bipolar junction transistor are drawn between

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Q. Fermi level is the maximum energy that an electron can possess at 0 K.

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