Q. AE 139 is a

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Q. The function off an oxide layer in an IC device is to

1. mask against diffusion or ion implantation
2. insulate the surface electrically
3. increase the melting point of Si
4. produce a chemically stable protective layer

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Q. The passage of current in an electrolyte is due to the movement of

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Q. In a CE bipolar transistor operating in active region, collector current is independent of

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Q. When a normal atom loses an electron

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Q. A sample of N-type semiconductor has electron density of 6.25 x 10¹⁸/cm³ at 300k. If the intrinsic concentration of carriers in this sample is 2.5 x 10¹³/cm³ at this temperature the hole density works out to be

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Q. Mobility is directly proportional to Hall coefficient.

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Q. n channel FETs are better as compared to p-channel FET because

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Q. An n channel depletion type MOSFET has

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Q. In a JFET avalanche breakdown occurs when VDS = 22 V and VGS = 0. If VGS = -1 V, the avalanche breakdown will occur at

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Q. The energy of one quantum of light equal to hf.

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Q. For most metals, Fermi level EF is less than

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Q. The spins in a ferrimagnetic material are

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Q. The permeability of soft iron can be increased by

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Q. All of the following elements have three valence electrons EXCEPT

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Q. Assertion (A): In n-p-n transistor conduction is mainly due to electrons.

Reason (R): In n type materials electrons are majority carriers.

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Q. The factor n in the equation for calculating current for a silicon diode is

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Q. An LED is

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Q. An enhancement mode MOSFET is on when the gate voltage is

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Q. For the n-type semiconductor with n = NP and P = ni² / ND , the hole concentration will fall below the intrinsic value because some of the holes

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