Question
a.
Silicon
b.
Germanium
c.
Both (a) and (b) above
d.
None of the above
Posted under Electronics and Communication Engineering
Interact with the Community - Share Your Thoughts
Uncertain About the Answer? Seek Clarification Here.
Understand the Explanation? Include it Here.
Q. Which of the following element has four valence electrons?
Similar Questions
Explore Relevant Multiple Choice Questions (MCQs)
Q. In a transistor operating in forward active mode
View solution
Q. In standard TTL, the 'totem pole' stage refers to
View solution
Q. In p type semiconductor, the hole concentration
View solution
Q. In order to achieve good stabilization in potential divider method current I1 through R1 and R2 should be
View solution
Q. A sample of N type semiconductor has electron density of 6.25 x 10⁸/cm² at 300 K. If the intrinsic concentration of carriers in this sample is 2.5 x 10¹³/cm³ at this temperature, the hole density works out to be
View solution
Q. Addition of 0.3 to 3.5% silicon to iron
View solution
Q. A bistable multivibrator
View solution
Q. Transconductance indicates the
View solution
Q. The density of states (i.e. number of states per eV per m³) in the conduction band for energy level E is proportional to
View solution
Q. A-P type material has an acceptor ion concentration of 1 x 10¹⁶ per cm³. Its intrinsic carrier concentration is 1.48 x 10¹ᴼ/ cm. The hole and electron mobilities are 0.05m²/V-sec and 0.13 m²/V-sec respectively calculate the resistivity of the material
View solution
Q. Resistivity is a property of a semiconductor that depends on
View solution
Q. Operating point signifies that
View solution
Q. For a junction FET in the pinch off region as the drain voltage is increased, the drain current
View solution
Q. For a MOS capacitor fabricated on a P-type semiconductor, strong inversion occurs when
View solution
Q. The primary function of a clamper circuit is to
View solution
Q. Breakdown in dielectric may be
View solution
Q. What is the function of silicon dioxide layer in MOSFETS?
View solution
Q. The modulation of effective base width by collector voltage is known as Early effect, hence reverse collector voltage
View solution
Q. Assertion (A): In intrinsic semiconductors, the charge concentration increases with temperature.
Reason (R): At higher temperatures, the forbidden energy gap in semiconductors is lower.
View solution
Q. Covalent bond energy in Germanium is approximately
View solution
Recommended Subjects
Are you eager to expand your knowledge beyond Electronics and Communication Engineering? We've handpicked a range of related categories that you might find intriguing.
Click on the categories below to discover a wealth of MCQs and enrich your understanding of various subjects. Happy exploring!
