Q. A-P type material has an acceptor ion concentration of 1 x 10¹⁶ per cm³. Its intrinsic carrier concentration is 1.48 x 10¹ᴼ/ cm. The hole and electron mobilities are 0.05m²/V-sec and 0.13 m²/V-sec respectively calculate the resistivity of the material

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Q. Resistivity is a property of a semiconductor that depends on

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Q. Operating point signifies that

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Q. For a junction FET in the pinch off region as the drain voltage is increased, the drain current

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Q. For a MOS capacitor fabricated on a P-type semiconductor, strong inversion occurs when

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Q. The primary function of a clamper circuit is to

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Q. Breakdown in dielectric may be

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Q. What is the function of silicon dioxide layer in MOSFETS?

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Q. The modulation of effective base width by collector voltage is known as Early effect, hence reverse collector voltage

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Q. Assertion (A): In intrinsic semiconductors, the charge concentration increases with temperature.

Reason (R): At higher temperatures, the forbidden energy gap in semiconductors is lower.

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Q. Covalent bond energy in Germanium is approximately

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Q. One electron volt is equivalent to

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Q. Resistivity of electrical conductors is most affected by

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Q. Wiedemann-Franz law correlates

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Q. Holes and electrons move in opposite directions.

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Q. AE 139 is a

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Q. The function off an oxide layer in an IC device is to

1. mask against diffusion or ion implantation
2. insulate the surface electrically
3. increase the melting point of Si
4. produce a chemically stable protective layer

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Q. The passage of current in an electrolyte is due to the movement of

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Q. In a CE bipolar transistor operating in active region, collector current is independent of

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Q. When a normal atom loses an electron

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