Q. Addition of 0.3 to 3.5% silicon to iron

View solution

Q. A bistable multivibrator

View solution

Q. Transconductance indicates the

View solution

Q. The density of states (i.e. number of states per eV per m³) in the conduction band for energy level E is proportional to

View solution

Q. A-P type material has an acceptor ion concentration of 1 x 10¹⁶ per cm³. Its intrinsic carrier concentration is 1.48 x 10¹ᴼ/ cm. The hole and electron mobilities are 0.05m²/V-sec and 0.13 m²/V-sec respectively calculate the resistivity of the material

View solution

Q. Resistivity is a property of a semiconductor that depends on

View solution

Q. Operating point signifies that

View solution

Q. For a junction FET in the pinch off region as the drain voltage is increased, the drain current

View solution

Q. For a MOS capacitor fabricated on a P-type semiconductor, strong inversion occurs when

View solution

Q. The primary function of a clamper circuit is to

View solution

Q. Breakdown in dielectric may be

View solution

Q. What is the function of silicon dioxide layer in MOSFETS?

View solution

Q. The modulation of effective base width by collector voltage is known as Early effect, hence reverse collector voltage

View solution

Q. Assertion (A): In intrinsic semiconductors, the charge concentration increases with temperature.

Reason (R): At higher temperatures, the forbidden energy gap in semiconductors is lower.

View solution

Q. Covalent bond energy in Germanium is approximately

View solution

Q. One electron volt is equivalent to

View solution

Q. Resistivity of electrical conductors is most affected by

View solution

Q. Wiedemann-Franz law correlates

View solution

Q. Holes and electrons move in opposite directions.

View solution

Q. AE 139 is a

View solution