Q. Metals approach superconductivity conditions

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Q. The phenomenon known as "Early effect" in a BJT refers to a reduction of the effective base width caused by

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Q. At absolute zero temperature a semiconductor behaves like

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Q. In a 741 OP-amp, there is 20 dB/decade fall-off starting at a relatively low frequency. This is due to

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Q. The current due to thermionic emission is given by Richardson Dushman equation.

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Q. The thermionic emission current is given by

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Q. In forward active region, the operation of a BJT

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Q. The conductivity of a semiconductor crystal due to any current carrier is not proportional to

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Q. A P-N junction diode dynamic conductance is directly proportional to

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Q. Gold is often diffused into silicon P-N junction devices to

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Q. In a solar cell, the photovoltaic voltages is the voltage at which the resultant current is

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Q. The forbidden energy gap between the valence band and conduction band will be wide in case of

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Q. At 0 K the forbidden energy gap in intrinsic semi conductor is about

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Q. The resistance of a metallic wire would

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Q. If 100 V is the peak voltage across the secondary of the transformer in a half-wave rectifier (without any filter circuit), then the maximum voltage on the reverse-biased diode is

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Q. The O/P Power of a power amplifier is several times its input power. It is possible because

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Q. In p type semiconductor holes are majority carriers.

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Q. Due to the formation of Schottky defects the density of the crystal

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Q. The band gap of silicon at 300K is

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Q. Typical value of reverse current in a semiconductor diode is

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