Question
a.
positive
b.
zero
c.
negative
d.
rated current
Posted under Electronics and Communication Engineering
Interact with the Community - Share Your Thoughts
Uncertain About the Answer? Seek Clarification Here.
Understand the Explanation? Include it Here.
Q. In a solar cell, the photovoltaic voltages is the voltage at which the resultant current is
Similar Questions
Explore Relevant Multiple Choice Questions (MCQs)
Q. The forbidden energy gap between the valence band and conduction band will be wide in case of
View solution
Q. At 0 K the forbidden energy gap in intrinsic semi conductor is about
View solution
Q. The resistance of a metallic wire would
View solution
Q. If 100 V is the peak voltage across the secondary of the transformer in a half-wave rectifier (without any filter circuit), then the maximum voltage on the reverse-biased diode is
View solution
Q. The O/P Power of a power amplifier is several times its input power. It is possible because
View solution
Q. In p type semiconductor holes are majority carriers.
View solution
Q. Due to the formation of Schottky defects the density of the crystal
View solution
Q. The band gap of silicon at 300K is
View solution
Q. Typical value of reverse current in a semiconductor diode is
View solution
Q. Which of the following element has four valence electrons?
View solution
Q. In a transistor operating in forward active mode
View solution
Q. In standard TTL, the 'totem pole' stage refers to
View solution
Q. In p type semiconductor, the hole concentration
View solution
Q. In order to achieve good stabilization in potential divider method current I1 through R1 and R2 should be
View solution
Q. A sample of N type semiconductor has electron density of 6.25 x 10⁸/cm² at 300 K. If the intrinsic concentration of carriers in this sample is 2.5 x 10¹³/cm³ at this temperature, the hole density works out to be
View solution
Q. Addition of 0.3 to 3.5% silicon to iron
View solution
Q. A bistable multivibrator
View solution
Q. Transconductance indicates the
View solution
Q. The density of states (i.e. number of states per eV per m³) in the conduction band for energy level E is proportional to
View solution
Q. A-P type material has an acceptor ion concentration of 1 x 10¹⁶ per cm³. Its intrinsic carrier concentration is 1.48 x 10¹ᴼ/ cm. The hole and electron mobilities are 0.05m²/V-sec and 0.13 m²/V-sec respectively calculate the resistivity of the material
View solution
Recommended Subjects
Are you eager to expand your knowledge beyond Electronics and Communication Engineering? We've handpicked a range of related categories that you might find intriguing.
Click on the categories below to discover a wealth of MCQs and enrich your understanding of various subjects. Happy exploring!
