Q. The conductivity of an intrinsic semiconductor is

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Q. At a P-N junction, the potential barrier is due to the charges on either side of the junction, which consists of

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Q. In a vacuum triode μ = rpgm.

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Q. The material which has zero temperature coefficient of resistance is

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Q. When the light falling on a photodiode increases, the reverse minority current

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Q. When a ferromagnetic substance is magnetised, small changes in dimensions occur. Such a phenomenon is known as

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Q. In a bipolar transistor which current is smallest

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Q. With increasing temperature, the electrical conductivity of metals

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Q. The reverse saturation current in a semiconductor diode consists of

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Q. The current gain of a transistor is the ratio of

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Q. If a sample of Ge and a sample of Si have the same impurity density are kept at room temperature

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Q. Photoelectric emitters in photo tubes are generally made of

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Q. Assertion (A): Power transistors are more commonly of silicon npn type.

Reason (R): The fabrication of silicon npn transistors is easy.

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Q. In N-type semiconductor

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Q. The addition of n type impurity to intrinsic material creates allowable energy levels.

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Q. Which of the following elements act as donor impurities?

1. Gold
2. Phosphorus
3. Boron
4. Antimony
5. Arsenic
6. Indium

Select the correct answer using the codes given below:

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Q. Which of the following material can be used in cable shields?

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Q. The charge of an electron is

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Q. The on voltage and forward breakover voltage of an SCR depend on

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Q. EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore, it can be concluded that

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