Q. If μn is mobility of free electron and μp is mobility of holes then for silicon at 300 K

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Q. In a specimen of n type semiconductor, the initial concentration of holes and electrons is pno and nno. When the specimen is subjected to radiation, the hole and electron concentration increase to pn and nn. Then

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Q. Which of the following diode is designed to operate in the breakdown region?

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Q. Fill in the suitable word in the blanks is the following question.

The electron in the outermost orbit is called __________ electron.

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Q. A silicon diode is forward biased and total applied voltage is 5 V. The voltage across p-n junction is

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Q. In a triode

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Q. Higher value of ripple factor indicates

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Q. When a semi-conductor is doped, its electrical conductivity

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Q. The conduction band is

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Q. If an additional two diodes were used to connect the 1 kW load across a bridge rectifier circuits, utilizing the full secondary of the transformer, how much d.c. power could be delivered using a transformer with the rating of 105 VA?

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Q. In an n channel JFET, VGS = VGS(off). Then

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Q. Varactor diode is forward biased when it is used.

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Q. A good ohmic contact on a P-type semiconductor chip is formed by introducing

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Q. The impurity added to extrinsic semiconductor is of the order of

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Q. For a BJT, avalanche multiplication factor depends on

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Q. The impurity commonly used for realizing the base region of a n-p-n transistor is

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Q. Assertion (A): In CE connection of n-p-n transistor. VCE is positive.

Reason (R): In BJT, the base collector junction is reverse biased.

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Q. Assertion (A): Tunnel diode is used in many pulse and digital circuits.

Reason (R): The v-i curve of a tunnel diode resembles letter 'N'.

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Q. In ferromagnetic materials

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Q. Which one of the following circuits is most suitable as an oscillator at a frequency of 100Hz?

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