Question
a.
It explain only the turn on portion of the device characteristics
b.
It explain only the turn off portion of the device characteristics
c.
It explain only the negative region portion of the device characteristics
d.
It explain all the regions of the device characteristics
Posted under Electronics and Communication Engineering
Interact with the Community - Share Your Thoughts
Uncertain About the Answer? Seek Clarification Here.
Understand the Explanation? Include it Here.
Q. Which of the following statements regarding two transistor model of p-n-n-p device is correct?
Similar Questions
Explore Relevant Multiple Choice Questions (MCQs)
Q. Resistivity of carbon is around
View solution
Q. Which of the following is anti-ferromagnetic material?
View solution
Q. Assertion (A): The capacitance of a reverse biased pin diode is lower than that of reverse biased p-n diode.
Reason (R): A PIN diode has an intrinsic layer between p and n regions.
View solution
Q. In the saturation region of CE output characteristics of n-p-n transistor, VCE is about
View solution
Q. In n channel JFET
View solution
Q. An intrinsic semiconductor (intrinsic electron density = 10¹⁶ m¯³) is deped with donors to a level of 10²² m¯³. What is the hole density assuming all donors to be ionized?
View solution
Q. The capacitor filter provides poor voltage regulation because
View solution
Q. If Vr is the reverse voltage across a graded P-N Junction, then the junction capacitance cj is proportional to
View solution
Q. In the schematic representation of bipolar junction transistor, the direction of arrow shows the direction of flow of
View solution
Q. Conductivity σ, mobility μ and Hall coefficient KH are related as
View solution
Q. Electric breakdown strength of a material depends on its
View solution
Q. The atomic weight of an atom is determined by
View solution
Q. The minimum charge carried by an ion is
View solution
Q. In intrinsic semiconductor at 300 K, the magnitude of free electron concentration in silicon is about
View solution
Q. EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that
View solution
Q. Which of the following semi-conductor has forbidden energy gap less 1 eV?
View solution
Q. In the vacuum diode equation ib = keb^1.5, the current is
View solution
Q. Thermosetting polymers are
View solution
Q. Which of these is used in seven segment display?
View solution
Q. Consider the following statement S1 and S2.
S1: The β of a bipolar transistor reduces if the base width is increased.
S2: the β of a bipolar transistor increases if the doping concentration in the base is increased.
Which one of the following is correct?
View solution
Recommended Subjects
Are you eager to expand your knowledge beyond Electronics and Communication Engineering? We've handpicked a range of related categories that you might find intriguing.
Click on the categories below to discover a wealth of MCQs and enrich your understanding of various subjects. Happy exploring!
