Q. Assertion (A): The capacitance of a reverse biased pin diode is lower than that of reverse biased p-n diode.

Reason (R): A PIN diode has an intrinsic layer between p and n regions.

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Q. In the saturation region of CE output characteristics of n-p-n transistor, VCE is about

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Q. In n channel JFET

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Q. An intrinsic semiconductor (intrinsic electron density = 10¹⁶ m¯³) is deped with donors to a level of 10²² m¯³. What is the hole density assuming all donors to be ionized?

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Q. The capacitor filter provides poor voltage regulation because

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Q. If Vr is the reverse voltage across a graded P-N Junction, then the junction capacitance cj is proportional to

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Q. In the schematic representation of bipolar junction transistor, the direction of arrow shows the direction of flow of

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Q. Conductivity σ, mobility μ and Hall coefficient KH are related as

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Q. Electric breakdown strength of a material depends on its

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Q. The atomic weight of an atom is determined by

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Q. The minimum charge carried by an ion is

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Q. In intrinsic semiconductor at 300 K, the magnitude of free electron concentration in silicon is about

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Q. EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that

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Q. Which of the following semi-conductor has forbidden energy gap less 1 eV?

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Q. In the vacuum diode equation ib = keb^1.5, the current is

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Q. Thermosetting polymers are

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Q. Which of these is used in seven segment display?

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Q. Consider the following statement S1 and S2.

S1: The β of a bipolar transistor reduces if the base width is increased.
S2: the β of a bipolar transistor increases if the doping concentration in the base is increased.

Which one of the following is correct?

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Q. Assertion (A): A BJT can be used as a switch.

Reason (R): In forward active mode emitter base junction is forward biased and base collector junction is reverse biased.

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Q. The concentration of minority carriers in an extrinsic semiconductor under equilibrium is

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