Q. In a zener diode

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Q. Which one of the following bipolar transistors has the highest current gain bandwidth Product (fr) for similar geometry?

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Q. The depletion layer across a P⁺ n junction lies

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Q. An increase of reverse voltage decreases the junction capacitance.

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Q. The maximum forward current in case of signal diode is in the range of

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Q. On which of the following effect do thermocouples work?

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Q. Which of the following constitutes an active component?

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Q. Which of the following characteristics of a silicon p-n junction diode make it suitable for use as ideal diode?

1. It has low saturation current.
2. It has high value of cut in voltage.
3. It can withstand large reverse voltage.
4. When compared with germanium diode, silicon diode shows a lower degree of temperature dependence under reverse conditions.

Select the answer using the given below

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Q. Assertion (A): Hall effect is used to find the type of semiconductor.

Reason (R): When a specimen of semiconductor carrying current I lies in a magnetic field the force on electrons and holes is in opposite directions.

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Q. When a p-n junction is forward biased. The width of depletion layer decreases.π

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Q. In which of the following case the rating of the transformer to deliver 100 watts of d.c. power to a load, will be least?

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Q. When a p-n Junction is forward biased

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Q. Consider the following statements about conditions that make a metal semiconductor contact rectifying

1. N type semiconductor with work function φs more than work function φM of metal
2. N type semiconductor with work function φs less than work function φM of metal
3. P type semiconductor with work function φs more than work function φM of metal
4. P type semiconductor with work function φs less than work function φM of metal

Of these statements

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Q. Silicon diodes have __________ reverse resistance than germanium diodes.

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Q. The kinetic energy of photoelectrons emitted by a photo sensitive surface depends on

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Q. When reverse bias is applied to a junction diode

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Q. Which of the following statements regarding two transistor model of p-n-n-p device is correct?

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Q. Resistivity of carbon is around

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Q. Which of the following is anti-ferromagnetic material?

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Q. Assertion (A): The capacitance of a reverse biased pin diode is lower than that of reverse biased p-n diode.

Reason (R): A PIN diode has an intrinsic layer between p and n regions.

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