Q. When a semiconductor bar is heated at one end, a voltage across the bar is developed. If the heated is positive the semiconductor is

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Q. Almost all resistors are made in a monolithic integrated circuit

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Q. The forbidden energy gap for silicon is

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Q. In energy band diagram of n type semiconductor, the donor energy level is

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Q. For an n-channel JEFT having drain source voltage constant if the gate source voltage is increased (more negative) pinch off would occur for

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Q. In a JFET, the drain current is maximum when

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Q. A potential difference is developed across a current carrying metal strip when the strip is placed in a transverse magnetic field. The above effect is known as

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Q. In a zener diode

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Q. Which one of the following bipolar transistors has the highest current gain bandwidth Product (fr) for similar geometry?

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Q. The depletion layer across a P⁺ n junction lies

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Q. An increase of reverse voltage decreases the junction capacitance.

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Q. The maximum forward current in case of signal diode is in the range of

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Q. On which of the following effect do thermocouples work?

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Q. Which of the following constitutes an active component?

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Q. Which of the following characteristics of a silicon p-n junction diode make it suitable for use as ideal diode?

1. It has low saturation current.
2. It has high value of cut in voltage.
3. It can withstand large reverse voltage.
4. When compared with germanium diode, silicon diode shows a lower degree of temperature dependence under reverse conditions.

Select the answer using the given below

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Q. Assertion (A): Hall effect is used to find the type of semiconductor.

Reason (R): When a specimen of semiconductor carrying current I lies in a magnetic field the force on electrons and holes is in opposite directions.

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Q. When a p-n junction is forward biased. The width of depletion layer decreases.π

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Q. In which of the following case the rating of the transformer to deliver 100 watts of d.c. power to a load, will be least?

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Q. When a p-n Junction is forward biased

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Q. Consider the following statements about conditions that make a metal semiconductor contact rectifying

1. N type semiconductor with work function φs more than work function φM of metal
2. N type semiconductor with work function φs less than work function φM of metal
3. P type semiconductor with work function φs more than work function φM of metal
4. P type semiconductor with work function φs less than work function φM of metal

Of these statements

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