Q. The forbidden band in semiconductors is of the order of

View solution

Q. For an P-N-P transistor in normal operation its junction are biased as

View solution

Q. A FET is to be operated as voltage variable resistor. For this drain to source voltage VDS should be,

View solution

Q. Assertion (A): FET has characteristics very similar to that of pentode.

Reason (R): Both FET and pentode are voltage controlled devices.

View solution

Q. The current gain of a bipolar transistor drops at high frequencies because of

View solution

Q. Highest resistivity of the following is

View solution

Q. Lowest noise can be expected in case of

View solution

Q. For a BJT, under the saturation condition,

View solution

Q. When a semiconductor bar is heated at one end, a voltage across the bar is developed. If the heated is positive the semiconductor is

View solution

Q. Almost all resistors are made in a monolithic integrated circuit

View solution

Q. The forbidden energy gap for silicon is

View solution

Q. In energy band diagram of n type semiconductor, the donor energy level is

View solution

Q. For an n-channel JEFT having drain source voltage constant if the gate source voltage is increased (more negative) pinch off would occur for

View solution

Q. In a JFET, the drain current is maximum when

View solution

Q. A potential difference is developed across a current carrying metal strip when the strip is placed in a transverse magnetic field. The above effect is known as

View solution

Q. In a zener diode

View solution

Q. Which one of the following bipolar transistors has the highest current gain bandwidth Product (fr) for similar geometry?

View solution

Q. The depletion layer across a P⁺ n junction lies

View solution

Q. An increase of reverse voltage decreases the junction capacitance.

View solution

Q. The maximum forward current in case of signal diode is in the range of

View solution