Question
a.
JFET
b.
MOSFET
c.
Both JFET and MOSFET
d.
None of the above
Posted under Electronics and Communication Engineering
Interact with the Community - Share Your Thoughts
Uncertain About the Answer? Seek Clarification Here.
Understand the Explanation? Include it Here.
Q. Which of the following is known as insulated gate FET?
Similar Questions
Explore Relevant Multiple Choice Questions (MCQs)
Q. Assertion (A): The hybrid π model of a transistor can be reduced to h parameter model and vice versa.
Reason (R): Hybrid π and h parameter models are interrelated as both of them describe the same device.
View solution
Q. Which impurity atom will give p type semiconductor when added to intrinsic semiconductor?
View solution
Q. An insulator will conduct when the
View solution
Q. Zener breakdown occurs
View solution
Q. Which rectifier has the best ratio of rectification?
View solution
Q. Assertion (A): A p-n junction is used as rectifier.
Reason (R): A p-n junction has low resistance in forward direction and high resistance in reverse direction.
View solution
Q. In an integrated circuit the SiO₂ layers provide
View solution
Q. For a n-channel JFET with r₀ = 10 kW, (VGs= 0 V, VP = - 6 V)the drain resistance rd at VGS= - 3 V is given by
View solution
Q. Which of the following are voltage controlled devices?
View solution
Q. In intrinsic semiconductor magnitude of free electron and hole concentrations are equal.
View solution
Q. A P-N junction offers
View solution
Q. In modern MOSFETs, the material used for the gate is
View solution
Q. Consider the following circuit configuration
1. common Emitter
2. common Base
3. emitter follower
4. emitter follower using Darlington pair.
The correct sequence in increasing order of I/P impedance of these configuration:
View solution
Q. Assertion (A): Field emission is substantially independent of temperature.
Reason (R): When a high electric field is created at metal surface field emission may occur.
View solution
Q. The maximum power handling capacity of a resistor depends on
View solution
Q. Epitaxial growth is used in ICs
View solution
Q. The mean life time of carrier may range from 10¯⁹ seconds to hundreds of μ-seconds.
View solution
Q. In which mode of BJT operation are both junctions forward biased?
View solution
Q. Addition of a small amount of antimony to germanium will result in
View solution
Q. The ratio of diffusion constant for hole DP to the mobility for holes is proportional to
View solution
Recommended Subjects
Are you eager to expand your knowledge beyond Electronics and Communication Engineering? We've handpicked a range of related categories that you might find intriguing.
Click on the categories below to discover a wealth of MCQs and enrich your understanding of various subjects. Happy exploring!
