Q. If both the emitter base and the collector base junctions of a bipolar transistor are forward biased, the transistor is in the

View solution

Q. In a triode the potential of grid (with respect to cathode) is usually

View solution

Q. A varactor diode is

View solution

Q. The output v-i characteristics of enhancement type MOSFET has

View solution

Q. In a full wave rectifier, the current in each of the diodes flows for

View solution

Q. In an ideal junction transistor the impurity concentration in emitter (E ), base (B) and collector (C) is such that

View solution

Q. The rating of a transformer to deliver 100 watts of D.C. power to a load under half wave rectifier will be nearly

View solution

Q. When a p-n junction is forward biased, the current remains zero till the applied voltage overcomes the barrier potential.

View solution

Q. Which of the following is known as insulated gate FET?

View solution

Q. Assertion (A): The hybrid π model of a transistor can be reduced to h parameter model and vice versa.

Reason (R): Hybrid π and h parameter models are interrelated as both of them describe the same device.

View solution

Q. Which impurity atom will give p type semiconductor when added to intrinsic semiconductor?

View solution

Q. An insulator will conduct when the

View solution

Q. Zener breakdown occurs

View solution

Q. Which rectifier has the best ratio of rectification?

View solution

Q. Assertion (A): A p-n junction is used as rectifier.

Reason (R): A p-n junction has low resistance in forward direction and high resistance in reverse direction.

View solution

Q. In an integrated circuit the SiO₂ layers provide

View solution

Q. For a n-channel JFET with r₀ = 10 kW, (VGs= 0 V, VP = - 6 V)the drain resistance rd at VGS= - 3 V is given by

View solution

Q. Which of the following are voltage controlled devices?

View solution

Q. In intrinsic semiconductor magnitude of free electron and hole concentrations are equal.

View solution

Q. A P-N junction offers

View solution