Q. Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resulting electric field inside the speciment will be in

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Q. In a p-n-p transistor operating in forward active mode

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Q. Consider the following statements.

1. Etching
2. Exposure to UV radiation
3. Stripping
4. Developing

After a wafer has been coated with photo resist the correct sequence of these steps in photolithography is

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Q. If both the emitter base and the collector base junctions of a bipolar transistor are forward biased, the transistor is in the

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Q. In a triode the potential of grid (with respect to cathode) is usually

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Q. A varactor diode is

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Q. The output v-i characteristics of enhancement type MOSFET has

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Q. In a full wave rectifier, the current in each of the diodes flows for

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Q. In an ideal junction transistor the impurity concentration in emitter (E ), base (B) and collector (C) is such that

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Q. The rating of a transformer to deliver 100 watts of D.C. power to a load under half wave rectifier will be nearly

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Q. When a p-n junction is forward biased, the current remains zero till the applied voltage overcomes the barrier potential.

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Q. Which of the following is known as insulated gate FET?

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Q. Assertion (A): The hybrid π model of a transistor can be reduced to h parameter model and vice versa.

Reason (R): Hybrid π and h parameter models are interrelated as both of them describe the same device.

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Q. Which impurity atom will give p type semiconductor when added to intrinsic semiconductor?

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Q. An insulator will conduct when the

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Q. Zener breakdown occurs

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Q. Which rectifier has the best ratio of rectification?

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Q. Assertion (A): A p-n junction is used as rectifier.

Reason (R): A p-n junction has low resistance in forward direction and high resistance in reverse direction.

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Q. In an integrated circuit the SiO₂ layers provide

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Q. For a n-channel JFET with r₀ = 10 kW, (VGs= 0 V, VP = - 6 V)the drain resistance rd at VGS= - 3 V is given by

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