Q. Assertion (A): When forward biased a p-n junction has low resistance.

Reason (R): The ratio dv/di is called dynamic resistance.

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Q. Assertion (A): JFET is a voltage controlled device.

Reason (R): The drain current can be controlled by controlling VGS.

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Q. For a P-N junction diode, the current in reverse bias may be

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Q. An amplifier with resistive -ve feedback has two left poles in its open loop transfer function. The amplifier

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Q. Amplification of ultrasonic waves is possible in a piezoelectric semiconductor under applied electric field. The basic phenomenon involved is known as

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Q. For a junction FET in the pinch off region, as the drain voltage is increased, the drain current

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Q. For a BJT, under the saturation region.

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Q. In which mode of BJT operation are both junctions reverse biased?

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Q. In a bipolar transistor, the emitter base junction has

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Q. Which of these has semi-conductor metal junction?

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Q. The ripple factor of power supply is a measure of

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Q. The product kT (where k is Boltzmann's constant and T is absolute temperature) at room temperature is about

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Q. If E is energy level of electron and EF is fermi level, and T = 0 and E > EF, then

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Q. Which variety of copper has the best conductivity?

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Q. The number of valence electrons in a silicon atom is

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Q. In a JFET VDS exceeds the rated value. Then it operates in

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Q. In LED the radiation is in

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Q. The rate of change of excess carrier density is proportional to carrier density.

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Q. Tuned voltage amplifiers are not used

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Q. The main reason why Ni-Zn ferrites are used for audio and T.V. transformers is that

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