Question
a.
the probability of finding an occupied quantum state of energy higher than EF is zero
b.
all quantum states with energies greater than EF are occupied
c.
some quantum states with energies greater than EF are occupied
d.
majority of quantum states with energies greater than EF are occupied
Posted under Electronics and Communication Engineering
Interact with the Community - Share Your Thoughts
Uncertain About the Answer? Seek Clarification Here.
Understand the Explanation? Include it Here.
Q. If E is energy level of electron and EF is fermi level, and T = 0 and E > EF, then
Similar Questions
Explore Relevant Multiple Choice Questions (MCQs)
Q. Which variety of copper has the best conductivity?
View solution
Q. The number of valence electrons in a silicon atom is
View solution
Q. In a JFET VDS exceeds the rated value. Then it operates in
View solution
Q. In LED the radiation is in
View solution
Q. The rate of change of excess carrier density is proportional to carrier density.
View solution
Q. Tuned voltage amplifiers are not used
View solution
Q. The main reason why Ni-Zn ferrites are used for audio and T.V. transformers is that
View solution
Q. Assertion (A): When light falls at junction of p-n photodiode, its p side becomes positive and n side becomes negative.
Reason (R): When a photodiode is short circuited, the current in the external circuit flows from p side to n side.
View solution
Q. In what condition does BJT act like an open switch
View solution
Q. In a JFET
View solution
Q. A power supply has full-load voltage of 20 V. What will be its no load voltage when its voltage regulation is 100%
View solution
Q. For a photo conductor with equal electron and hole mobilities and perfect ohmic contacts at the ends, an increase in the intensities of optical illumination results in
View solution
Q. Ferrities are particularly suited for high frequency applications because of their
View solution
Q. In intrinsic semiconductor, the fermi level
View solution
Q. Electromagnetic waves transport
View solution
Q. In a forward biased p-n junction current enters p material as hole current and leaves n material as electron current of the same magnitude.
View solution
Q. When P-N junction is in forward bias, by increasing the battery voltage
View solution
Q. A semiconductor in its purest form called
View solution
Q. Which of the following is an active device?
View solution
Q. Assertion (A): The forward dynamic resistance of p-n diode varies inversely with current.
Reason (R): The forward dynamic resistance of p-n diode varies with the operating voltage.
View solution
Recommended Subjects
Are you eager to expand your knowledge beyond Electronics and Communication Engineering? We've handpicked a range of related categories that you might find intriguing.
Click on the categories below to discover a wealth of MCQs and enrich your understanding of various subjects. Happy exploring!