Question
a.
cut off
b.
saturation
c.
active
d.
both (b) and (c)
Posted under Electronics and Communication Engineering
Interact with the Community - Share Your Thoughts
Uncertain About the Answer? Seek Clarification Here.
Understand the Explanation? Include it Here.
Q. In what condition does BJT act like an open switch
Similar Questions
Explore Relevant Multiple Choice Questions (MCQs)
Q. In a JFET
View solution
Q. A power supply has full-load voltage of 20 V. What will be its no load voltage when its voltage regulation is 100%
View solution
Q. For a photo conductor with equal electron and hole mobilities and perfect ohmic contacts at the ends, an increase in the intensities of optical illumination results in
View solution
Q. Ferrities are particularly suited for high frequency applications because of their
View solution
Q. In intrinsic semiconductor, the fermi level
View solution
Q. Electromagnetic waves transport
View solution
Q. In a forward biased p-n junction current enters p material as hole current and leaves n material as electron current of the same magnitude.
View solution
Q. When P-N junction is in forward bias, by increasing the battery voltage
View solution
Q. A semiconductor in its purest form called
View solution
Q. Which of the following is an active device?
View solution
Q. Assertion (A): The forward dynamic resistance of p-n diode varies inversely with current.
Reason (R): The forward dynamic resistance of p-n diode varies with the operating voltage.
View solution
Q. If E (i.e., available energy state) = EF(i.e., Fermi level), then probability that state E will be occupied is 0.5 for any temperature T.
View solution
Q. The output, V-I characteristics of an Enhancement type MOSFET has
View solution
Q. Piezoelectric quartz crystal resonators find application where
View solution
Q. The forbidden energy gap between the valence band and conduction band will be least in case of
View solution
Q. If too large current passes through the diode
View solution
Q. Assertion (A): Intrinsic semiconductor is an insulator at 0 K.
Reason (R): Fermi level in intrinsic semiconductor is in the centre of forbidden energy band.
View solution
Q. A CMOS amplifier when compared to an N-channel. MOSFET, has the advantage of
View solution
Q. Dynamic resistance of diode is dv/di
View solution
Q. The presence of some holes in an intrinsic semiconductor at room temperature is due to
View solution
Recommended Subjects
Are you eager to expand your knowledge beyond Electronics and Communication Engineering? We've handpicked a range of related categories that you might find intriguing.
Click on the categories below to discover a wealth of MCQs and enrich your understanding of various subjects. Happy exploring!
