Q. In case of photo conductor for germanium when forbidden energy gap is 0.72 eV, the critical wavelength for intrinsic excitation will be

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Q. Intrinsic concentration of charge carriers in a semiconductor varies as

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Q. The dynamic resistance of a forward biased p-n diode

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Q. A thermistor is a

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Q. In a bipolar transistor, the base collector junction has

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Q. An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

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Q. What is the necessary a.c. input power from the transformer secondary used in a half wave rectifier to deliver 500 W of d.c. power to the load?

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Q. In a semi-conductor diode, the barrier offers opposition to

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Q. In a half wave rectifier, the load current flows

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Q. The term efficacy, is defined by

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Q. The addition of p type impurity to intrinsic material creates allowable energy levels.

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Q. An ideal Op-amp is an ideal

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Q. Free electrons exist in

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Q. Resistivity of copper is nearly

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Q. Maximum rectification efficiency for a half wave rectifier is

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Q. For a semiconductor, the conductivity is a function of the products of the number of charge carriers and their mobilites. As result, if the temperature of a slab of intrinsic silicon increases, how does its conductivity vary?

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Q. In a junction transistor, the collector cut-off current 'ICB0' reduces considerably by doping the

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Q. A Schottky diode clamp is used along with a switching BJT for

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Q. The first dominant pole encountered in the frequency response of a compensated op-amp is approximately at

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Q. As compared to bipolar junction transistor, a FET

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