Analog Electronics MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Analog Electronics, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Analog Electronics MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Analog Electronics mcq questions that explore various aspects of Analog Electronics problems. Each MCQ is crafted to challenge your understanding of Analog Electronics principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Analog Electronics MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Analog Electronics. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Analog Electronics knowledge to the test? Let's get started with our carefully curated MCQs!

Analog Electronics MCQs | Page 103 of 103

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Q1021.
The circuit of figure is called
Discuss
Answer: (a).current mirror
Q1022.
In the equivalent circuit of figure voltage gain is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (c).C
Discuss
Answer: (a).NPN transistor
Q1024.
In a closed loop non-inverting amplifier, constructed using single break-frequency op-amp, bandwidth with feedback can be written as. (f0 - break frequency, β - gain of the feedback circuit, A - open loop voltage gain, Af - closed loop voltage gain)

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (a).A
Q1025.
Two identical FETs, each characterised by the parameters gm and rd are connected in parallel. The composite FET is then characterised by the parameters

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (c).C