Direct Detection Receiver and Optical Amplification MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Direct Detection Receiver and Optical Amplification, a fundamental topic in the field of Optical Communication. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Direct Detection Receiver and Optical Amplification MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Direct Detection Receiver and Optical Amplification mcq questions that explore various aspects of Direct Detection Receiver and Optical Amplification problems. Each MCQ is crafted to challenge your understanding of Direct Detection Receiver and Optical Amplification principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Optical Communication tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Direct Detection Receiver and Optical Amplification MCQs are your pathway to success in mastering this essential Optical Communication topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Direct Detection Receiver and Optical Amplification. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Direct Detection Receiver and Optical Amplification knowledge to the test? Let's get started with our carefully curated MCQs!

Direct Detection Receiver and Optical Amplification MCQs | Page 5 of 11

Q41.
The properties of a bipolar transistor are superior to the FET.
Discuss
Answer: (b).False
Q42.
Bipolar transistor is more useful amplifying device than FET at frequencies _____________
Discuss
Answer: (d).Above 25 MHz
Q43.
High-performance microwave FETs are fabricated from ___________
Discuss
Answer: (c).Gallium arsenide
Q44.
Gallium arsenide MESFETs are advantageous than Silicon FETs.
Discuss
Answer: (a).True
Discuss
Answer: (b).Pin photodiode and low noise amplifier (GaAs MESFETs)
Q46.
PIN-FET hybrid receiver is designed for use at a transmission rate of _____________
Discuss
Answer: (d).140 Mbits⁻¹
Q47.
It is difficult to achieve higher transmission rates using conventional __________
Discuss
Answer: (c).PIN-FET or APD receivers
Q48.
Which receiver can be fabricated using PIN-FET hybrid approach?
Discuss
Answer: (a).Trans-impedance front end receiver
Q49.
A silicon p-i-n photodiode utilized with the amplifier and the receiver is designed to accept data at a rate of ___________
Discuss
Answer: (b).274 Mbits⁻¹
Q50.
What is usually required by FETs to optimize the figure of merit?
Discuss
Answer: (d).Matching with the detector
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