Optical Sources MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Optical Sources, a fundamental topic in the field of Optical Communication. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Optical Sources MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Optical Sources mcq questions that explore various aspects of Optical Sources problems. Each MCQ is crafted to challenge your understanding of Optical Sources principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Optical Communication tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Optical Sources MCQs are your pathway to success in mastering this essential Optical Communication topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Optical Sources. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Optical Sources knowledge to the test? Let's get started with our carefully curated MCQs!

Optical Sources MCQs | Page 8 of 18

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Q71.
_________________ is a technique used to render the non-conducting material around the active cavity by producing permanent defects in the implanted area.
Discuss
Answer: (c).Ion implantation
Q72.
The threshold temperature coefficient for InGaAsP devices is in the range of __________
Discuss
Answer: (b).40-75 K
Q73.
The process where the energy released during the recombination of an electron-hole event getting transferred to another carrier is known as __________
Discuss
Answer: (b).Auger recombination
Discuss
Answer: (a).Strained MQW structure
Q75.
High strain in strained structure should be incorporated.
Discuss
Answer: (b).False
Q76.
The parameter that prevents carrier from recombination is __________
Discuss
Answer: (c).Carrier leakage
Q77.
Determine the threshold current density for an AlGaAs injection laser with Tโ‚€=180k at 30°C.
Discuss
Answer: (d).5.09
Q78.
The phenomenon occurring when the electron and photon population within the structure comes into equilibrium is known as __________
Discuss
Answer: (d).Relaxation oscillations
Q79.
When a current pulse reaches a laser having parasitic capacitance after the initial delay time, that pulse will __________
Discuss
Answer: (d).Gets broader
Q80.
Reducing delay time and ____________ are of high importance for lasers.
Discuss
Answer: (d).Relaxation oscillations