Optical Sources MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Optical Sources, a fundamental topic in the field of Optical Communication. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Optical Sources MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Optical Sources mcq questions that explore various aspects of Optical Sources problems. Each MCQ is crafted to challenge your understanding of Optical Sources principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Optical Communication tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Optical Sources MCQs are your pathway to success in mastering this essential Optical Communication topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Optical Sources. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Optical Sources knowledge to the test? Let's get started with our carefully curated MCQs!

Optical Sources MCQs | Page 3 of 18

Discover more Topics under Optical Communication

Q21.
The recombination in indirect band-gap semiconductors is slow.
Discuss
Answer: (a).True
Q22.
Calculate the radioactive minority carrier lifetime in gallium arsenide when the minority carriers are electrons injected into a p-type semiconductor region which has a hole concentration of 10¹โธ cmโป³. The recombination coefficient for gallium arsenide is 7.21*10โป¹โฐ cm³sโป¹.
Discuss
Answer: (b).1.39 ns
Q23.
Which impurity is added to gallium phosphide to make it an efficient light emitter?
Discuss
Answer: (c).Nitrogen
Discuss
Answer: (d).Heavy doping of both p-type and n-type material
Q25.
A GaAs injection laser has a threshold current density of 2.5*10³ Acmโป² and length and width of the cavity is 240 ฮผm and 110 ฮผm respectively. Find the threshold current for the device.
Discuss
Answer: (b).660 mA
Q26.
A GaAs injection laser with an optical cavity has refractive index of 3.6. Calculate the reflectivity for normal incidence of the plane wave on the GaAs-air interface.
Discuss
Answer: (c).0.32
Q27.
A homo-junction is an interface between two adjoining single-crystal semiconductors with different band-gap energies.
Discuss
Answer: (b).False
Q28.
How many types of hetero-junctions are available?
Discuss
Answer: (a).Two
Q29.
The ______________ system is best developed and is used for fabricating both lasers and LEDs for the shorter wavelength region.
Discuss
Answer: (d).GaAs/Alga AS DH
Q30.
Stimulated emission by recombination of injected carriers is encouraged in __________
Discuss
Answer: (a).Semiconductor injection laser