Q. In semiconductor injection laser, narrow line bandwidth is of the order?

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Q. Injection laser have a high threshold current density of __________

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Q. ηᴛ is known as slope quantum efficiency.

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Q. The total efficiency of an injection laser with GaAs active region is 12%. The applied voltage is 3.6 V and band gap energy for GaAs is 2.34 eV. Determine external power efficiency.

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Q. In a DH laser, the sides of cavity are formed by _______________

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Q. A particular laser structure is designed so that the active region extends the edges of devices.

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Q. Gain guided laser structure are __________

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Q. Laser modes are generally separated by few __________

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Q. The spectral width of emission from the single mode device is __________

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Q. Single longitudinal mode operation is obtained by __________

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Q. A correct DH structure will restrict the vertical width of waveguide region is?

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Q. The external power efficiency of an injection laser with a GaAs is 13% having band gap energy of 1.64 eV. Determine external power efficiency.

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Q. In multimode injection lasers, the construction of current flow to the strip is obtained in structure by __________

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Q. What is the strip width of injection laser?

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Q. Some refractive index variation is introduced into lateral structure of laser.

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Q. Buried hetero-junction (BH) device is a type of _____________ laser where the active volume is buried in a material of wider band-gap and lower refractive index.

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Q. In Buried hetero-junction (BH) lasers, the optical field is confined within __________

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Q. A double-channel planar buried hetero-structure (DCP BH) has a planar active region, the confinement material is?

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Q. Problems resulting from parasitic capacitances can be overcome __________

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Q. Quantum well lasers are also known as __________

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